Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C

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Periodical:

Solid State Phenomena (Volumes 80-81)

Edited by:

O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner

Pages:

65-70

DOI:

10.4028/www.scientific.net/SSP.80-81.65

Citation:

Y. Leconte et al., "Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C", Solid State Phenomena, Vols. 80-81, pp. 65-70, 2001

Online since:

November 2001

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