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Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C
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Effects of Ion Bombardment upon Microcrystalline Silicon Growth
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HomeSolid State PhenomenaSolid State Phenomena Vols. 80-81Effects of Ion Bombardment upon Microcrystalline...

Effects of Ion Bombardment upon Microcrystalline Silicon Growth

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Polycrystalline Semiconductors VI

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Periodical:

Solid State Phenomena (Volumes 80-81)

Pages:

71-76

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.80-81.71

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Online since:

November 2001

Authors:

Billel Kalache, R. Brenot, V. Tripathi, Satyendra Kumar, R. Vanderhaghen, Pere Roca i Cabarrocas

Keywords:

Growth Mechanism, Ion Bombardment, Microcrystalline Silicon, Plasma Deposition, Spectroscopic Ellipsometry (SE)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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