Preface
Silicon Wafer Requirements for ULSI Device Processing
p.1
p.1
Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing
p.9
p.9
On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
p.17
p.17
Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior
p.25
p.25
The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions
p.35
p.35
Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth
p.41
p.41
Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
p.49
p.49
Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
p.57
p.57
Silicon Wafer Requirements for ULSI Device Processing
Abstract:
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Periodical:
Solid State Phenomena (Volumes 82-84)
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1-8
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Online since:
November 2001
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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