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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84

Solid State Phenomena Vols. 82-84

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84

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Table of Contents

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Paper Title Page

Preface

Silicon Wafer Requirements for ULSI Device Processing

Authors: Francesca Illuzzi

1

Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing

Authors: Robert J. Falster

9

On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals

Authors: Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf

17

Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior

Authors: Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka

25

The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions

Authors: Kazutaka Terashima, Hajime Noguchi

35

Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth

Authors: V.V. Kalaev, V.A. Zabelin, Yuri Makarov

41

Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers

Authors: Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu

49

Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies

Authors: L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, Bengt Gunnar Svensson

57

Infrared Absorption Analysis of Nitrogen in Czochralski Silicon

Authors: Y. Yamanaka, Hiroshi Harada, K. Tanahashi, T. Mikayama, N. Inoue

63

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