The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions
p.35
p.35
Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth
p.41
p.41
Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
p.49
p.49
Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
p.57
p.57
Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
p.63
p.63
Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers
p.69
p.69
Optical Properties of Oxygen Agglomerates in Silicon
p.75
p.75
Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects
p.81
p.81
Silicon Isotope Shifts of the 648-cm-1 Infrared Absorption Line of Oxygen in Silicon
p.87
p.87
Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 82-84)
Pages:
63-68
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Online since:
November 2001
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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