Paper Titles

Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
p.57

Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
p.63

Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers
p.69

Optical Properties of Oxygen Agglomerates in Silicon
p.75

Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects
p.81

Silicon Isotope Shifts of the 648-cm^-1 Infrared Absorption Line of Oxygen in Silicon
p.87

Thermal Donors in Silicon Implanted with Rare Earth Impurities
p.93

Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon
p.99

Vibrational Modes of Oxygen Dimers in Germanium
p.105

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Positron Annihilation Studies of Oxygen...

Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

81-86

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.81

Citation:

Cite this paper

Online since:

November 2001

Authors:

Roberto S. Brusa, W. Deng, Grzegorz P. Karwasz, Antonio Zecca

Keywords:

Oxygen Precipitates, Positrons, SiO_x Precipitates, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: