Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

81-86

DOI:

10.4028/www.scientific.net/SSP.82-84.81

Citation:

R. S. Brusa et al., "Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO2 Films: Role of Vacancy-Like Defects", Solid State Phenomena, Vols. 82-84, pp. 81-86, 2002

Online since:

November 2001

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$35.00

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