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Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
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Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers
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Optical Properties of Oxygen Agglomerates in Silicon
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Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects
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Silicon Isotope Shifts of the 648-cm^-1 Infrared Absorption Line of Oxygen in Silicon
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Thermal Donors in Silicon Implanted with Rare Earth Impurities
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Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon
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Vibrational Modes of Oxygen Dimers in Germanium
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Oxygen Precipitation in Silicon Doped with Tin
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Silicon Isotope Shifts of the 648-cm-1 Infrared...

Silicon Isotope Shifts of the 648-cm^-1 Infrared Absorption Line of Oxygen in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

87-92

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.87

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Online since:

November 2001

Authors:

Hiroshi Yamada-Kaneta

Keywords:

Infrared Absorption, Isotope Shift, Local Vibrational Modes, Oxygen, Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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