Paper Titles

On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
p.17

Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior
p.25

The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions
p.35

Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth
p.41

Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
p.49

Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
p.57

Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
p.63

Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers
p.69

Optical Properties of Oxygen Agglomerates in Silicon
p.75

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Effect of Heavy Carbon, Nitrogen and Boron Doping...

Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

49-56

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.49

Citation:

Cite this paper

Online since:

November 2001

Authors:

Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu

Keywords:

Boron, Carbon, Computer Simulation of Oxygen Precipitation, Epitaxial Wafers, IG, Internal Gettering, Lattice Strains, Nitrogen, Oxygen Precipitation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: