Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

49-56

DOI:

10.4028/www.scientific.net/SSP.82-84.49

Citation:

K. Sueoka et al., "Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers", Solid State Phenomena, Vols. 82-84, pp. 49-56, 2002

Online since:

November 2001

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$35.00

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