Paper Titles

Silicon Wafer Requirements for ULSI Device Processing
p.1

Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing
p.9

On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
p.17

Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior
p.25

The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions
p.35

Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth
p.41

Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
p.49

Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
p.57

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Diffusion Coefficient and Equilibrium...

Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

25-34

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.25

Citation:

Cite this paper

Online since:

November 2001

Authors:

Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka

Keywords:

Diffusion, Grown-in Defects, Point Defect, Self-Interstitial, Silicon, Vacancy, Void

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: