Solid State Phenomena Vols. 82-84

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https://doi.org/10.4028/www.scientific.net/SSP.82-84

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Table of Contents

Paper Title Page

Incorporation, Diffusion and Agglomeration of Carbon in Silicon

Authors: P. Lavéant, P. Werner, G. Gerth, U.M. Gösele

189

Suppression of Boron Transient Enhanced Diffusion by C Trapping

Authors: S. Mirabella, A. Coati, S. Scalese, D. De Salvador, S. Pulvirenti, G. Bisognin, E. Napolitani, A. Terrasi, M. Berti, A. Carnera, A.V. Drigo, F. Priolo

195

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

Authors: Fuccio Cristiano, B. Colombeau, Caroline Bonafos, A. Altibelli, G. Benassayag, A. Claverie

201

Room Temperature Point Defect Migration in Crystalline Si

Authors: Sebania Libertino, Salvatore Coffa

207

Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy

Authors: Wolfgang Schröter, Vitaly V. Kveder, Henrik Hedemann

213

The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon

Authors: I.V. Peidous, K.V. Loiko, D.A. Simpson, W.R. Frensley, Howard R. Huff

219

Stress-Induced Redistribution of Point Defects in Silicon Device Structures

Authors: K.V. Loiko, I.V. Peidous, T.E. Harrington, W.R. Frensley

225

Characterization of Interstitial-Related Bulk Defects in p^- Silicon Substrates by Epitaxial Deposition

Authors: R. Schmolke, W. Angelberger, Wilfried von Ammon, H. Bender

231

Monitoring of Defects in Thermal Oxides during Electrical Stress

Authors: Domenico Caputo, Fernanda Irrera, Fabrizio Palma

237

Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions

Authors: I.V. Antonova, E.P. Neustroev, Andrzej Misiuk, V.A. Skuratov

243