The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon
p.219
p.219
Stress-Induced Redistribution of Point Defects in Silicon Device Structures
p.225
p.225
Characterization of Interstitial-Related Bulk Defects in p- Silicon Substrates by Epitaxial Deposition
p.231
p.231
Monitoring of Defects in Thermal Oxides during Electrical Stress
p.237
p.237
Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
p.243
p.243
A Study of the Conversion of the VO to the VO2 Defect in Heat-Treated Silicon under Stress
p.249
p.249
Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects
p.255
p.255
Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon
p.259
p.259
Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?
p.267
p.267
Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
Abstract:
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Periodical:
Solid State Phenomena (Volumes 82-84)
Pages:
243-248
Citation:
Online since:
November 2001
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© 2002 Trans Tech Publications Ltd. All Rights Reserved
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