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Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects
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Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon
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Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?
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Void Shrinkage during Thermal Oxidation of Silicon
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Gettering Induced by Helium Implantation: Application to a Device
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Defects Created by Helium Implantation at Different Temperatures in Silicon
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Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Helium Bubble Growth in Silicon: Ripening or...

Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

267-272

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.267

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Online since:

November 2001

Authors:

V.M. Vishnyakov, S.E. Donnelly, G. Carter, R.C. Birtcher, L. Haworth

Keywords:

Bubble, Gettering, Growth, Helium, Implantation, Impurity, Ion, Ripening, Silicon, Void

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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