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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Passivation of Al/Si Interface by Chemical...

Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.255

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Online since:

November 2001

Authors:

Zsolt E. Horváth, M. Ádám, P. Godio, G. Borionetti, I.A. Szabó, E. Gombia, Vo Van Tuyen

Keywords:

Chemical Treatment, Interface Modification, Ohmic Contact, Schottky Barrier, Silicon, Surface Passivation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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