Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

255-258

DOI:

10.4028/www.scientific.net/SSP.82-84.255

Citation:

Z. E. Horváth et al., "Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects", Solid State Phenomena, Vols. 82-84, pp. 255-258, 2002

Online since:

November 2001

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$35.00

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