Paper Titles

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
p.201

Room Temperature Point Defect Migration in Crystalline Si
p.207

Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy
p.213

The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon
p.219

Stress-Induced Redistribution of Point Defects in Silicon Device Structures
p.225

Characterization of Interstitial-Related Bulk Defects in p^- Silicon Substrates by Epitaxial Deposition
p.231

Monitoring of Defects in Thermal Oxides during Electrical Stress
p.237

Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
p.243

A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress
p.249

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Stress-Induced Redistribution of Point Defects in...

Stress-Induced Redistribution of Point Defects in Silicon Device Structures

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

225-230

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.225

Citation:

Cite this paper

Online since:

November 2001

Authors:

K.V. Loiko, I.V. Peidous, T.E. Harrington, W.R. Frensley

Keywords:

Diffusion, Equilibrium Concentration, Interstitial, Point Defect, Silicon, Stress, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: