Paper Titles

Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
p.177

Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
p.183

Incorporation, Diffusion and Agglomeration of Carbon in Silicon
p.189

Suppression of Boron Transient Enhanced Diffusion by C Trapping
p.195

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
p.201

Room Temperature Point Defect Migration in Crystalline Si
p.207

Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy
p.213

The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon
p.219

Stress-Induced Redistribution of Point Defects in Silicon Device Structures
p.225

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Thermal Evolution of Extrinsic Defects in Ion...

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

201-206

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.201

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Online since:

November 2001

Authors:

Fuccio Cristiano, B. Colombeau, Caroline Bonafos, A. Altibelli, G. Benassayag, A. Claverie

Keywords:

Atomistic Simulation, Extended Defects, Ostwald Ripening

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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