Paper Titles

Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
p.155

Atomistic Study of Boron Clustering in Silicon
p.163

Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
p.171

Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
p.177

Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
p.183

Incorporation, Diffusion and Agglomeration of Carbon in Silicon
p.189

Suppression of Boron Transient Enhanced Diffusion by C Trapping
p.195

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
p.201

Room Temperature Point Defect Migration in Crystalline Si
p.207

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Interstitial Diffusion Influence upon...

Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

183-188

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.183

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Online since:

November 2001

Authors:

Filippo Giannazzo, Vito Raineri, Vittorio Privitera, F. Priolo

Keywords:

Diffusion, Interstitial, Scanning Capacitance Microscopy

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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