Paper Titles

Hydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic Resonance
p.133

Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon
p.139

Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching
p.145

Hydrogen-Related Defects in High-Resistivity Silicon
p.150

Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
p.155

Atomistic Study of Boron Clustering in Silicon
p.163

Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
p.171

Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
p.177

Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
p.183

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Infra Red Absorption by Hydrogen-Passivated Cracks...

Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

155-162

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.155

Citation:

Cite this paper

Online since:

November 2001

Authors:

D.V. Kilanov, L.N. Safronov, V.P. Popov

Keywords:

Hydrogen Defects, Infrared Absorption, Internal Surface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: