Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

177-182

DOI:

10.4028/www.scientific.net/SSP.82-84.177

Citation:

S. Solmi et al., "Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose", Solid State Phenomena, Vols. 82-84, pp. 177-182, 2002

Online since:

November 2001

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$35.00

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