Paper Titles

Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching
p.145

Hydrogen-Related Defects in High-Resistivity Silicon
p.150

Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
p.155

Atomistic Study of Boron Clustering in Silicon
p.163

Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
p.171

Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
p.177

Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
p.183

Incorporation, Diffusion and Agglomeration of Carbon in Silicon
p.189

Suppression of Boron Transient Enhanced Diffusion by C Trapping
p.195

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Self-Interstitial Kinetics and Transient Phenomena...

Self-Interstitial Kinetics and Transient Phenomena in Si Crystals

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

171-176

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.171

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Online since:

November 2001

Authors:

Antonino La Magna, Salvatore Coffa, Sebania Libertino, Matthias Strobel, Luciano Colombo

Keywords:

Interstitial-Type Defects, Kinetic Monte Carlo Approaches, Non-Equilibrium Kinetics, Quantum Mechanics Calculations

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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