Paper Titles

Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
p.171

Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
p.177

Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
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Incorporation, Diffusion and Agglomeration of Carbon in Silicon
p.189

Suppression of Boron Transient Enhanced Diffusion by C Trapping
p.195

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
p.201

Room Temperature Point Defect Migration in Crystalline Si
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Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy
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The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Suppression of Boron Transient Enhanced Diffusion...

Suppression of Boron Transient Enhanced Diffusion by C Trapping

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

195-200

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.195

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Cite this paper

Online since:

November 2001

Authors:

S. Mirabella, A. Coati, S. Scalese, D. De Salvador, S. Pulvirenti, G. Bisognin, E. Napolitani, A. Terrasi, M. Berti, A. Carnera, A.V. Drigo, F. Priolo

Keywords:

C-Trapping, Shallow Junctions, Si-Interstitials, Transient Enhanced Diffusion TED

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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