Paper Titles

Suppression of Boron Transient Enhanced Diffusion by C Trapping
p.195

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
p.201

Room Temperature Point Defect Migration in Crystalline Si
p.207

Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy
p.213

The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon
p.219

Stress-Induced Redistribution of Point Defects in Silicon Device Structures
p.225

Characterization of Interstitial-Related Bulk Defects in p^- Silicon Substrates by Epitaxial Deposition
p.231

Monitoring of Defects in Thermal Oxides during Electrical Stress
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Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84The Effect of Intrinsic Point Defects upon...

The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

219-224

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.219

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Online since:

November 2001

Authors:

I.V. Peidous, K.V. Loiko, D.A. Simpson, W.R. Frensley, Howard R. Huff

Keywords:

Defect, Dislocation, Interaction, Pinning, Self-Interstitial, Silicon, Stress

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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