Paper Titles

Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon
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Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching
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Hydrogen-Related Defects in High-Resistivity Silicon
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Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
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Atomistic Study of Boron Clustering in Silicon
p.163

Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
p.171

Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
p.177

Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
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Incorporation, Diffusion and Agglomeration of Carbon in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Atomistic Study of Boron Clustering in Silicon

Atomistic Study of Boron Clustering in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

163-170

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.163

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Online since:

November 2001

Authors:

Paola Alippi, Paolo Ruggerone, Luciano Colombo

Keywords:

Defect, Plane-Wave, Pseudopotentials, Silicon, Tight-Binding

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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