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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84

Solid State Phenomena Vols. 82-84

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84

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Table of Contents

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Paper Title Page

Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals

Authors: P. Geranzani, M. Pagani, C. Pello, G. Borionetti

381

The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process

Authors: M.J. Binns, A. Banerjee, R. Wise, D.J. Myers, T.A. McKenna

387

Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers

Authors: Sergei V. Koveshnikov, David Beauchaine, Zbigniew J. Radzimski, Li Ling, K.V. Ravi

393

Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon

Authors: Reinhard Kögler, A. Peeva, J. Kaschny, Wolfgang Skorupa, H. Hutter

399

Gettering Technology Based on Porous Silicon

Authors: G. Lamedica, Marco Balucani, A. Ferrari, V. Bondarenko, V. Yakovtseva, L. Dolgyi

405

Platinum Silicide Precipitate Formation During Phosphorus Diffusion Gettering in Silicon

Authors: Michael Seibt, A. Döller, Vitaly V. Kveder, Andreas Sattler, A. Zozime

411

Impact of a Cooling Process on the Dopant Activity of Platinum in Silicon

Authors: Laurent Ventura, Bernard Pichaud, Frédéric Lanois

417

Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

Authors: Eddy Simoen, Cor Claeys, A. Kraitchinskii, M. Kras'ko, V.B. Neimash, L.I. Shpinar

425

Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown

Authors: E. Sciacca, Salvatore Lombardo, D. Patti, D. Sanfillippo, C. Di Franco, M. Ghioni, F. Zappa, Emanuele Rimini, S. Cova

431

Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors

Authors: Edouard V. Monakhov, B.S. Avset, Anders Hallén, Bengt Gunnar Svensson

441

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