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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Defect Engineering and Prevention of Impurity...

Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

399-404

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.399

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Online since:

November 2001

Authors:

Reinhard Kögler, A. Peeva, J. Kaschny, Wolfgang Skorupa, H. Hutter

Keywords:

Cu, Defect Engineering, Ion Implantation, R_p/2-Defects, Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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