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The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process
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Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers
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Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon
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Impact of a Cooling Process on the Dopant Activity of Platinum in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Application of Gate Oxide Integrity to the...

Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

393-398

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.393

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Online since:

November 2001

Authors:

Sergei V. Koveshnikov, David Beauchaine, Zbigniew J. Radzimski, Li Ling, K.V. Ravi

Keywords:

Gate-Oxide Integrity, Gettering, Metallic Impurity

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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