Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

393-398

DOI:

10.4028/www.scientific.net/SSP.82-84.393

Citation:

S. V. Koveshnikov et al., "Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers", Solid State Phenomena, Vols. 82-84, pp. 393-398, 2002

Online since:

November 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.