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Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers
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Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon
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Platinum Silicide Precipitate Formation During Phosphorus Diffusion Gettering in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84The Realization of Uniform and Reliable Intrinsic...

The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

387-392

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.387

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Online since:

November 2001

Authors:

M.J. Binns, A. Banerjee, R. Wise, D.J. Myers, T.A. McKenna

Keywords:

Bulk Microdefects, Denuded Zones, Gettering in 300mm Wafers, Intrinsic Gettering, MDZ®, Metallic Contamination, Oxygen Precipitation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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