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Electrical Activity of Dislocations in Si Decorated by Ni
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Comparison of Nickel and Iron Gettering in Cz Silicon Wafers
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Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections
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Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals
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The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Comparison of Nickel and Iron Gettering in Cz...

Comparison of Nickel and Iron Gettering in Cz Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

367-372

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.367

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Online since:

November 2001

Authors:

F.G. Kirscht, B. Orschel, S. Rouvimov, M. Shabani

Keywords:

Atomic Absorption Spectroscopy, Critical Bulk Defect Density, Czochralski Silicon, Epitaxial Silicon, External Gettering, Gettering Efficiency, Internal Gettering, Photoluminescence (PL)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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