Paper Titles

Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus
p.309

Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
p.315

Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
p.323

Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers
p.331

Copper-Defect and Copper-Impurity Interactions in Silicon
p.341

Efficiency of Intrinsic Gettering for Copper in Silicon
p.349

Nickel Gettering in Silicon: Role of Oxygen
p.355

Electrical Activity of Dislocations in Si Decorated by Ni
p.361

Comparison of Nickel and Iron Gettering in Cz Silicon Wafers
p.367

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Copper-Defect and Copper-Impurity Interactions in...

Copper-Defect and Copper-Impurity Interactions in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

341-348

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.341

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Online since:

November 2001

Authors:

Stefan K. Estreicher, D. West, P. Ordejón

Keywords:

Copper (Cu), Hydrogen, Molecular Dynamic (MD), Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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