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Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus
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Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
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Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
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Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Hydrogen Redistribution and Void Formation in...

Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

315-322

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.315

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Online since:

November 2001

Authors:

Alexander G. Ulyashin, Reinhart Job, Wolfgang R. Fahrner, Dieter Grambole, Folker Herrmann

Keywords:

Elastic Recoil Detection Analysis (ERDA), Hydrogen in Silicon, RAMAN, Scanning Electron Microscope (SEM), SRP, Void

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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