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Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus
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Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Influence of Depth in Helium Desorption from...

Influence of Depth in Helium Desorption from Cavities Induced by ³He Implantation in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

303-308

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.303

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Online since:

November 2001

Authors:

R. Delamare, E. Ntsoenzok, F. Labohm, A. van Veen

Keywords:

Cavities, Desorption, Helium, Implantation, Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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