Paper Titles

Influence of Depth in Helium Desorption from Cavities Induced by ³He Implantation in Silicon
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Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus
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Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
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Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
p.323

Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers
p.331

Copper-Defect and Copper-Impurity Interactions in Silicon
p.341

Efficiency of Intrinsic Gettering for Copper in Silicon
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Nickel Gettering in Silicon: Role of Oxygen
p.355

Electrical Activity of Dislocations in Si Decorated by Ni
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Iron Solubility in Boron-Doped Silicon and Fe...

Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

331-340

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.331

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Online since:

November 2001

Authors:

Mohammad B. Shabani, Y. Shiina, S. Shimanuki, F.G. Kirscht

Keywords:

Cz Boron-Doped Silicon, Diffusion, Gettering, Graphite Furnace Atomic Absorption Spectroscopy, Inductively Coupled Plasma-Mass Spectroscopy, Iron, p/p⁺ Epitaxial Wafer, Relaxation Gettering, Room Temperature Acid Vapor Phase Decomposition, Segregation Gettering, Solubility

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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