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Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
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Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers
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Copper-Defect and Copper-Impurity Interactions in Silicon
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Efficiency of Intrinsic Gettering for Copper in Silicon
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Nickel Gettering in Silicon: Role of Oxygen
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Electrical Activity of Dislocations in Si Decorated by Ni
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Comparison of Nickel and Iron Gettering in Cz Silicon Wafers
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Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections
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Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Nickel Gettering in Silicon: Role of Oxygen

Nickel Gettering in Silicon: Role of Oxygen

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

355-360

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.355

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Online since:

November 2001

Authors:

G. Regula, R. El Bouayadi, Bernard Pichaud, E. Ntsoenzok

Keywords:

Gettering, Helium, Implantation, Nanocavities, Nickel Ni, Oxygen, Silicide

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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