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Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
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Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
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Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers
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Copper-Defect and Copper-Impurity Interactions in Silicon
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Efficiency of Intrinsic Gettering for Copper in Silicon
p.349

Nickel Gettering in Silicon: Role of Oxygen
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Electrical Activity of Dislocations in Si Decorated by Ni
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Comparison of Nickel and Iron Gettering in Cz Silicon Wafers
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Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Efficiency of Intrinsic Gettering for Copper in...

Efficiency of Intrinsic Gettering for Copper in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

349-354

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.349

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Online since:

November 2001

Authors:

Seiichi Isomae, Hidetsugu Ishida, Toshihiko Itoga, Kazuyuki Hozawa

Keywords:

Copper (Cu), Gettering Efficiency, Intrinsic Gettering, Oxygen Precipitates

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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