Paper Titles

Gold Gettering by H⁺ or He⁺⁺ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers
p.297

Influence of Depth in Helium Desorption from Cavities Induced by ³He Implantation in Silicon
p.303

Dopant Segregation on Cavities Induced by Helium Implantation: The Case of Boron and Phosphorus
p.309

Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
p.315

Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites
p.323

Iron Solubility in Boron-Doped Silicon and Fe Gettering Mechanism in p/p⁺ Epitaxial Wafers
p.331

Copper-Defect and Copper-Impurity Interactions in Silicon
p.341

Efficiency of Intrinsic Gettering for Copper in Silicon
p.349

Nickel Gettering in Silicon: Role of Oxygen
p.355

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Precipitation Kinetics and Recombination Activity...

Precipitation Kinetics and Recombination Activity of Cu in Si in the Presence of Internal Gettering Sites

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

323-330

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.323

Citation:

Cite this paper

Online since:

November 2001

Authors:

Andrei A. Istratov, R. Sachdeva, C. Flink, S. Balasubramanian, Eicke R. Weber

Keywords:

Copper (Cu), Gettering, Minority Carrier Diffusion Length, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: