Gold Gettering by H+ or He++ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

297-302

DOI:

10.4028/www.scientific.net/SSP.82-84.297

Citation:

I. Périchaud et al., "Gold Gettering by H+ or He++ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers", Solid State Phenomena, Vols. 82-84, pp. 297-302, 2002

Online since:

November 2001

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$35.00

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