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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Recombination Lifetimes of Iron-Contaminated...

Recombination Lifetimes of Iron-Contaminated Silicon Wafers: Characterization Using a Single Set of Capture Cross-Sections

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

373-380

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.373

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Online since:

November 2001

Authors:

M. Rommel, G. Zoth, M. Ullrich, Heiner Ryssel

Keywords:

Capture Cross-Section, Injection Level Dependence, Iron Contamination, Minority Carrier Lifetime, Resistivity Dependence, Silicon, Temperature Dependence

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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