Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

425-430

DOI:

10.4028/www.scientific.net/SSP.82-84.425

Citation:

E. Simoen et al., "Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon", Solid State Phenomena, Vols. 82-84, pp. 425-430, 2002

Online since:

November 2001

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Price:

$35.00

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