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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Radiation Defects and Carrier Lifetime in...

Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

425-430

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.425

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Online since:

November 2001

Authors:

Eddy Simoen, Cor Claeys, A. Kraitchinskii, M. Kras'ko, V.B. Neimash, L.I. Shpinar

Keywords:

Carrier Lifetime, Deep Level Transient Spectroscopy, Radiation Defect, Silicon, Tin-Doping

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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