Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon
p.425
p.425
Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown
p.431
p.431
Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors
p.441
p.441
p-n Junction Leakage in Neutron-Irradiated Diodes Fabricated in Various Silicon Substrates
p.447
p.447
Radiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V Measurements
p.453
p.453
Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model
p.459
p.459
Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation
p.465
p.465
Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films
p.471
p.471
Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes
p.477
p.477
Radiation Damage in MOS Structures, Irradiated with High-Energy Heavy Ions and Fast Neutrons, with Regard to Charge DLTS and C-V Measurements
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Solid State Phenomena (Volumes 82-84)
Pages:
453-458
Citation:
Online since:
November 2001
Authors:
Keywords:
Price:
Сopyright:
© 2002 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: