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Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model
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Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Radiation Damage in npn Si Transistors due to...

Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

465-470

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.465

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Online since:

November 2001

Authors:

H. Ohyama, Toshio Hirao, Eddy Simoen, Cor Claeys, Masashi Nakabayashi, S. Onoda

Keywords:

1-MeV Electron Irradiation, High-Temperature Gamma Irradiation, Induced Electron Capture Levels, npn Si Transistor, Radiation Damage

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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