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Proton Irradiation Effects on Standard and Oxygenated Silicon Diodes
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Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Wafers
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Hydrogen-Related Phenomena in SOI Fabricated by Using H⁺-Ion Implantation
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Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing
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Properties of Silicon Film in a Silicon-on-Glass Structure
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Hydrogen-Related Phenomena in SOI Fabricated by...

Hydrogen-Related Phenomena in SOI Fabricated by Using H⁺-Ion Implantation

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

491-496

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.491

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Online since:

November 2001

Authors:

I.V. Antonova, D.V. Nikolaev, O.V. Naumova, V.P. Popov

Keywords:

Charge Accumulation, Deep Level, Hydrogen Implantation, Interface States (or Traps), Shallow Donors, Silicon-on-Insulator (SOI)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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