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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Charge Relaxation at Oxygen-Enriched Silicon Grain...

Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

515-522

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.515

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Online since:

November 2001

Authors:

A.K. Fedotov, A.V. Mazanik, Alexander G. Ulyashin

Keywords:

Direct-Bonded Wafers, Interface, Oxygen, Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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