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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Effects of Pulsed Electron Beam Annealing on...

Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

529-532

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.529

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Online since:

November 2001

Authors:

J. Huran, I. Hotový, J. Staňo, A.P. Kobzev, N.I. Balalykin

Keywords:

Amorphous Silicon Carbide, Electron Beam Annealing, PECVD, Semiconductor Thin Film

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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