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Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD
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Cavities in He-Implanted SiC
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Study of Relaxed Si_0.7Ge_0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy
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On the Properties of Divacancies in Si_1-xGe_x
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Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si_1-xGe_x Alloy
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Study of Relaxed Si0.7Ge0.3 Buffers, Grown on...

Study of Relaxed Si_0.7Ge_0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

539-544

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.539

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Online since:

November 2001

Authors:

G. Wöhl, Erich Kasper, M. Klose, T. Hackbarth, H.-J. Herzog, H. Kibbel

Keywords:

Differential Molecular Beam Epitaxy, Micro-Raman Spectroscopy, Relaxed SiGe Buffer Layers

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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