Study of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

539-544

DOI:

10.4028/www.scientific.net/SSP.82-84.539

Citation:

G. Wöhl et al., "Study of Relaxed Si0.7Ge0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy", Solid State Phenomena, Vols. 82-84, pp. 539-544, 2002

Online since:

November 2001

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$35.00

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