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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Influence of Ge Content on Electrical Properties:...

Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si_1-xGe_x Alloy

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

557-564

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.557

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Online since:

November 2001

Authors:

C. Cerrina, A. Nejim, Y. Wang, P.L.F. Hemment

Keywords:

Boron Doping, Carrier Transport Properties, Ion Beam Synthesis, Silicon-Germanium (SiGe)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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