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Characterization of SiC Grown on Si(111) by Supersonic C₆₀ Beams
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Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD
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Cavities in He-Implanted SiC
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Cavities in He-Implanted SiC

Cavities in He-Implanted SiC

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

533-538

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.533

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Online since:

November 2001

Authors:

Jean François Barbot, Erwan Oliviero, Marie-Laure David, Alain Declémy, C. Blanchard, Marie France Beaufort, A. van Veen

Keywords:

Bubble, He Implantation, Silicon Carbide (SiC)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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