Paper Titles

Hydrogen-Induced Shallow Donors in Silicon and Silicon-on-Insulator Structures Formed by Hydrogen Slicing
p.497

Properties of Silicon Film in a Silicon-on-Glass Structure
p.503

Structural and Photoluminescence Properties of H⁺ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing
p.509

Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries
p.515

Characterization of SiC Grown on Si(111) by Supersonic C₆₀ Beams
p.523

Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD
p.529

Cavities in He-Implanted SiC
p.533

Study of Relaxed Si_0.7Ge_0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy
p.539

On the Properties of Divacancies in Si_1-xGe_x
p.545

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Characterization of SiC Grown on Si(111) by...

Characterization of SiC Grown on Si(111) by Supersonic C₆₀ Beams

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

523-528

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.523

Citation:

Cite this paper

Online since:

November 2001

Authors:

L. Aversa, R. Verucchi, G. Ciullo, A. Boschetti, L. Ferrari, P. Moras, M. Pedio, A. Pesci, Salvatore Iannotta

Keywords:

Film Growth, Fullerene, Silicon Carbide (SiC), Supersonic Beam, Surface Spectroscopy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: