Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

459-464

DOI:

10.4028/www.scientific.net/SSP.82-84.459

Citation:

S. Saramad and A. Moussavi-Zarandi, "Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model", Solid State Phenomena, Vols. 82-84, pp. 459-464, 2002

Online since:

November 2001

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