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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Study of the Effect of Carrier Cross-Sections, on...

Study of the Effect of Carrier Cross-Sections, on the Leakage Current of Irradiated Silicon Detectors, using the Exchange Charge Model

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

459-464

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.459

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Online since:

November 2001

Authors:

S. Saramad, A. Moussavi-Zarandi

Keywords:

Annealing, Cluster, Effective Doping, Irradiation, Leakage Current, Silicon Detector

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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