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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Ultra Low-Level Ion Implantation Damage Detected...

Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

431-440

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.431

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Online since:

November 2001

Authors:

E. Sciacca, Salvatore Lombardo, D. Patti, D. Sanfillippo, C. Di Franco, M. Ghioni, F. Zappa, Emanuele Rimini, S. Cova

Keywords:

Avalanche Breakdown, Generation from Defects, Implant Damage, SPAD

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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