Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

431-440

DOI:

10.4028/www.scientific.net/SSP.82-84.431

Citation:

E. Sciacca et al., "Ultra Low-Level Ion Implantation Damage Detected by p-n Junctions Biased above Breakdown", Solid State Phenomena, Vols. 82-84, pp. 431-440, 2002

Online since:

November 2001

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Price:

$35.00

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