Volumes

Solid State Phenomena
Vol. 92

Solid State Phenomena
Vols. 90-91

Solid State Phenomena
Vol. 89

Solid State Phenomena
Vol. 88

Solid State Phenomena
Vol. 87

Solid State Phenomena
Vols. 85-86

Solid State Phenomena
Vols. 82-84

Solid State Phenomena
Vols. 80-81

Solid State Phenomena
Vols. 78-79

Solid State Phenomena
Vols. 76-77

Solid State Phenomena
Vols. 73-75

Solid State Phenomena
Vol. 72

Solid State Phenomena
Vol. 71

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84

Solid State Phenomena Vols. 82-84

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84

Export:

ToC:

Table of Contents

Paper Title Page

Structural and Photoluminescence Properties of H⁺ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing

Authors: Ida E. Tyschenko, A.B. Talochkin, K.S. Zhuravlev, V.I. Obodnikov, V.P. Popov

509

Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries

Authors: A.K. Fedotov, A.V. Mazanik, Alexander G. Ulyashin

515

Characterization of SiC Grown on Si(111) by Supersonic C₆₀ Beams

Authors: L. Aversa, R. Verucchi, G. Ciullo, A. Boschetti, L. Ferrari, P. Moras, M. Pedio, A. Pesci, Salvatore Iannotta

523

Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD

Authors: J. Huran, I. Hotový, J. Staňo, A.P. Kobzev, N.I. Balalykin

529

Cavities in He-Implanted SiC

Authors: Jean François Barbot, Erwan Oliviero, Marie-Laure David, Alain Declémy, C. Blanchard, Marie France Beaufort, A. van Veen

533

Study of Relaxed Si_0.7Ge_0.3 Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy

Authors: G. Wöhl, Erich Kasper, M. Klose, T. Hackbarth, H.-J. Herzog, H. Kibbel

539

On the Properties of Divacancies in Si_1-xGe_x

Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, W. Schröder

545

Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si_1-xGe_x Structures Grown by Molecular Beam Epitaxy with Combined Sources

Authors: L.K. Orlov, N.L. Ivina

551

Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si_1-xGe_x Alloy

Authors: C. Cerrina, A. Nejim, Y. Wang, P.L.F. Hemment

557

Defect-Related Current Instabilities in InAs/GaAs and AlGaAs/GaAs Structures?

Authors: Zsolt E. Horváth, S. Franchi, A. Bosacchi, P. Frigeri, E. Gombia, R. Mosca, Vo Van Tuyen

565