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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84

Solid State Phenomena Vols. 82-84

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84

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Table of Contents

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Paper Title Page

A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress

Authors: Charalamos A. Londos, M. Potsidou, Andrzej Misiuk, I.V. Antonova

249

Passivation of Al/Si Interface by Chemical Treatment: Schottky Barrier Height and Plasma Etch Induced Defects

Authors: Zsolt E. Horváth, M. Ádám, P. Godio, G. Borionetti, I.A. Szabó, E. Gombia, Vo Van Tuyen

255

Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon

Authors: Andrzej Misiuk, Boris A. Andreev, Valentin V. Emtsev, Charalamos A. Londos, Gagik A. Oganesyan, D.S. Poloskin

259

Helium Bubble Growth in Silicon: Ripening or Bubble Motion and Coalescence?

Authors: V.M. Vishnyakov, S.E. Donnelly, G. Carter, R.C. Birtcher, L. Haworth

267

Void Shrinkage during Thermal Oxidation of Silicon

Authors: Vito Raineri, Stella Giuffrida, Emanuele Rimini

273

Gettering Induced by Helium Implantation: Application to a Device

Authors: F. Roqueta, Daniel Alquier, Laurent Ventura, B. López

279

Defects Created by Helium Implantation at Different Temperatures in Silicon

Authors: Marie-Laure David, Erwan Oliviero, A. Ratchenkova, Nikolai N. Gerasimenko, Alain Declémy, Jean François Barbot, A. van Veen, Marie France Beaufort

285

Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon

Authors: R. Tonini, F. Corni, C. Nobili, G. Ottaviani, F. Cazzaniga, G. Queirolo

291

Gold Gettering by H⁺ or He⁺⁺ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers

Authors: Isabelle Périchaud, Eugene B. Yakimov, Santo Martinuzzi, Christiane Dubois

297

Influence of Depth in Helium Desorption from Cavities Induced by ³He Implantation in Silicon

Authors: R. Delamare, E. Ntsoenzok, F. Labohm, A. van Veen

303

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